IPB041N04NGXT

Specifications

Configuration

Single

Category

Power MOSFET

Package Width

9.45(Max)

Maximum Power Dissipation Mw

94000

Typical Rise Time Ns

3.8

Lead Shape

Gull-wing

Typical Gate Charge Vgs Nc

42@10V

Automotive

No

Parça Durumu

Obsolete

Ppap

No

Mounting

Surface Mount

Typical Turnoff Delay Time Ns

23

Maximum Drain Source Resistance Mohm

4.1@10V

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

3400@20V

Maximum Gate Source Voltage V

±20

Typical Turnon Delay Time Ns

16

Package Length

10.31(Max)

Standard Package Name

TO-263

Channel Type

N

Ambalaj

Tape and Reel

Typical Gate Charge10v Nc

42

Pcb Changed

2

Number Of Elements Per Chip

1

Typical Fall Time Ns

4.8

Eu Rohs

Compliant

Channel Mode

Enhancement

Pin Sayısı

3

Maximum Operating Temperature C

175

Supplier Package

D2PAK

Maximum Continuous Drain Current A

80

Maximum Drain Source Voltage V

40

Process Technology

OptiMOS

Tab

Tab

Minimum Operating Temperature C

-55

Package Height

4.57(Max)