IGW30N100T

Specifications

Gateemitter Thr Voltagemax

6.4 V

Configuration

Single

Rad Hardened

No

Continuous Collector Current Ic Max

30 A

ECCN Kodu

EAR99

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Jedec95 Code

TO-247AD

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collector Current Dc

60(A)

Üretici Parça No

IGW30N100T

Pd Power Dissipation

412 W

Transistor Element Material

SILICON

RoHS

Details

Part Aliases

IGW3N1TXK SP000380845 IGW30N100TFKSA1

Collectoremitter Voltagemax

1000 V

Birim Ağırlık

0.211644 oz

Number Of Terminals

3

Kılıf / Paket

TO-247-3

Operating Temperature Min

-55C

Channel Type

N

Ambalaj

Rail/Tube

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSFM-T3

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Collectoremitter Voltage

1000(V)

Seri

TRENCHSTOP IGBT

Transistor Application

POWER CONTROL

Gate To Emitter Voltage Max

±20(V)

Minimum Operating Temperature

- 55 C

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

3 +Tab

Collector Currentmax Ic

60 A

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Operating Temperaturemax

175 °C

Collectoremitter Saturation Voltage

1.55 V

Ihs Manufacturer

INFINEON TECHNOLOGIES AG