IDT10S60C

Specifications

Output Current

10 A

Max Surge Current

84 A

Max Reverse Leakage Current

140 µA

Reverse Recovery Time Trr

0 ns

Maks. Çalışma Sıcaklığı

175 °C

Polarity

Standard

Kurşunsuz

Lead Free

Min. Çalışma Sıcaklığı

-55 °C

Terminal

Through Hole

Diode Type

Silicon Carbide Schottky

Paket

Bulk

Capacitance Vr F

480pF @ 1V, 1MHz

Max Forward Surge Current Ifsm

84 A

Montaj

Through Hole

Forward Current

10 A

RoHS

Compliant

Max Repetitive Reverse Voltage Vrrm

600 V

Pin Sayısı

2

Voltage Rating Dc

600 V

Forward Voltage

1.7 V

Montaj Tipi

Through Hole

Element Configuration

Single

Speed

No Recovery Time > 500mA (Io)

Seri

thinQ!™

Peak Nonrepetitive Surge Current

84 A

Repetitive Peak Reverse Voltage

600

Akım Değeri

10 A

Current Average Rectified Io

10A (DC)

Kılıf / Paket

TO-220-2

Reach Svhc

No SVHC

Operating Temperature Junction

-55°C ~ 175°C

Peak Reverse Current

140 µA

Ürün Durumu

Active

Voltage Forward Vf Max If

1.7 V @ 10 A

Tedarikçi Cihaz Paketi

PG-TO220-2-2

Current Reverse Leakage Vr

140 µA @ 600 V

Voltage Dc Reverse Vr Max

600 V