IAUS180N04S4N015ATMA1

Specifications

Moisture Sensitivity Levels

1

Ppap

Unknown

Power Dissipationmax Abs

166 W

Drain Currentmax Abs Id

180 A

Svhc

Yes

Package Body Material

PLASTIC/EPOXY

Avalanche Energy Rating Eas

320 mJ

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Package Style

SMALL OUTLINE

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.0015 Ω

Operating Temperaturemax

175 °C

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

720 A

Svhc Exceeds Threshold

Yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Automotive

Yes

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Channel Type

N

Feedback Capmax Crss

145 pF

Reference Standard

AEC-Q101

Maximum Gate Threshold Voltage V

4

Maximum Drain Source Voltage V

40

Fabrika Tedarik Süresi

16 Weeks

Üretici Parça No

IAUS180N04S4N015ATMA1

Case Connection

DRAIN

Risk Rank

5.76

Configuration

SINGLE WITH BUILT-IN DIODE

Package Shape

RECTANGULAR

Eu Rohs

Compliant with Exemption

Eccn Us

EAR99

Number Of Elements

1

Drain Currentmax Id

180 A

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PSSO-G8

Ambalaj

Tape and Reel

Operating Temperaturemin

-55 °C

Ds Breakdown Voltagemin

40 V