GRP-DATA-JANTXV2N6849

Specifications

Typical Gate Charge Vgs Nc

34.8(Max)@10V

Typical Input Capacitance Vds Pf

800@25V

Maximum Idss Ua

25

Pin Sayısı

3

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

100

Ambalaj

Tape and Reel

Minimum Gate Threshold Voltage V

2

Eccn Us

EAR99

Maximum Gate Source Voltage V

±20

Configuration

Single

Channel Type

P

Supplier Package

TO-39

Typical Rise Time Ns

140(Max)

Maximum Gate Threshold Voltage V

4

Typical Gate Charge10v Nc

34.8(Max)

Lead Shape

Through Hole

Typical Gate To Drain Charge Nc

23.1(Max)

Maximum Diode Forward Voltage V

4.3

Maximum Operating Temperature C

150

Typical Reverse Transfer Capacitance Vds Pf

125@25V

Maximum Continuous Drain Current A

6.5

Maximum Power Dissipation Mw

25000

Maximum Pulsed Drain Current Tc25c A

25

Typical Turnoff Delay Time Ns

140(Max)

Minimum Operating Temperature C

-55

Typical Gate To Source Charge Nc

6.8(Max)

Ppap

No

Parça Durumu

Active

Typical Fall Time Ns

140(Max)

Çap

9.22(Max)

Channel Mode

Enhancement

Eu Rohs

Not Compliant

Package Height

4.54(Max)

Automotive

No

Pcb Changed

3

Category

Power MOSFET

Supplier Temperature Grade

Military

Number Of Elements Per Chip

1

Typical Output Capacitance Pf

350