GRP-DATA-JANSR2N7555U3

Specifications

Typical Rise Time Ns

100(Max)

Maximum Gate Threshold Voltage V

4.5

Maximum Operating Temperature C

150

Maximum Gate Source Leakage Current Na

100

Maximum Idss Ua

10

Pin Sayısı

3

Typical Input Capacitance Vds Pf

1016@25V

Typical Gate Charge Vgs Nc

32(Max)@12V

Supplier Package

SMD-0.5

Maximum Gate Source Voltage V

±20

Eccn Us

EAR99

Configuration

Single

Channel Type

N

Maximum Drain Source Voltage V

250(Min)

Number Of Elements Per Chip

1

Package Length

7.64(Max)

Supplier Temperature Grade

Military

Category

Power MOSFET

Pcb Changed

3

Maximum Drain Source Resistance Mohm

400@12V

Typical Turnon Delay Time Ns

25(Max)

Mounting

Surface Mount

Process Technology

R5

Package Width

10.28(Max)

Typical Turnoff Delay Time Ns

35(Max)

Maximum Continuous Drain Current A

10

Maximum Power Dissipation Mw

75000

Package Height

2.61(Max)

Eu Rohs

Supplier Unconfirmed

Channel Mode

Enhancement

Automotive

No

Typical Fall Time Ns

30(Max)

Parça Durumu

Active

Ppap

No

Minimum Operating Temperature C

-55