GRP-A-DATA-JANTX2N6849

Specifications

Maximum Diode Forward Voltage V

4.3

Maximum Operating Temperature C

150

Typical Gate Charge10v Nc

34.8(Max)

Typical Rise Time Ns

140(Max)

Maximum Gate Threshold Voltage V

4

Lead Shape

Through Hole

Typical Gate To Drain Charge Nc

23.1(Max)

Maximum Drain Source Voltage V

100

Minimum Gate Threshold Voltage V

2

Configuration

Single

Channel Type

P

Eccn Us

EAR99

Maximum Gate Source Voltage V

±20

Supplier Package

TO-39

Typical Input Capacitance Vds Pf

800@25V

Typical Gate Charge Vgs Nc

34.8(Max)@10V

Maximum Gate Source Leakage Current Na

100

Maximum Idss Ua

25

Pin Sayısı

3

Maximum Positive Gate Source Voltage V

20

Typical Output Capacitance Pf

350

Process Technology

HEXFET

Typical Turnon Delay Time Ns

60(Max)

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

320@10V

Standard Package Name

TO-205-AF

Operating Junction Temperature C

-55 to 150

Pcb Changed

3

Category

Power MOSFET

Supplier Temperature Grade

Military

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Typical Gate To Source Charge Nc

6.8(Max)

Çap

9.22(Max)

Typical Fall Time Ns

140(Max)

Parça Durumu

Active

Ppap

No

Automotive

No

Channel Mode

Enhancement

Eu Rohs

Not Compliant