DATA-2N6849JANTX

Specifications

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Supplier Temperature Grade

Military

Maximum Pulsed Drain Current Tc25c A

25

Package Height

4.54(Max)

Maximum Idss Ua

25

Typical Output Capacitance Pf

350

Maximum Drain Source Voltage V

100

Standard Package Name

TO-205-AF

Channel Type

P

Typical Turnon Delay Time Ns

60(Max)

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

25000

Typical Gate Charge10v Nc

34.8(Max)

Typical Turnoff Delay Time Ns

140(Max)

Lead Shape

Through Hole

Typical Gate To Drain Charge Nc

23.1(Max)

Automotive

No

Supplier Package

TO-39

Maximum Continuous Drain Current A

6.5

Pcb Changed

3

Eccn Us

EAR99

Category

Power MOSFET

Typical Input Capacitance Vds Pf

800@25V

Maximum Gate Threshold Voltage V

4

Number Of Elements Per Chip

1

Maximum Gate Source Leakage Current Na

100

Typical Rise Time Ns

140(Max)

Process Technology

HEXFET

Minimum Operating Temperature C

-55

Maximum Diode Forward Voltage V

4.3

Typical Fall Time Ns

140(Max)

Minimum Gate Threshold Voltage V

2

Pin Sayısı

3

Operating Junction Temperature C

-55 to 150

Eu Rohs

Not Compliant

Maximum Drain Source Resistance Mohm

320@10V

Typical Gate Charge Vgs Nc

34.8(Max)@10V

Typical Gate To Source Charge Nc

6.8(Max)

Parça Durumu

Active