BUZ73XT

Specifications

Maximum Drain Source Voltage V

200

Channel Mode

Enhancement

Typical Turnoff Delay Time Ns

55

Typical Rise Time Ns

40

Maximum Drain Source Resistance Mohm

400@10V

Process Technology

SIPMOS

Number Of Elements Per Chip

1

Maximum Gate Source Voltage V

±20

Typical Output Capacitance Pf

85

Typical Fall Time Ns

30

Typical Turnon Delay Time Ns

10

Maximum Continuous Drain Current A

7

Eccn Us

EAR99

Maximum Operating Temperature C

150

Category

Power MOSFET

Minimum Operating Temperature C

-55

Eu Rohs

Compliant

Maximum Gate Threshold Voltage V

4

Configuration

Single

Parça Durumu

Obsolete

Typical Input Capacitance Vds Pf

400@25V

Maximum Power Dissipation Mw

40000

Typical Reverse Recovery Charge Nc

600

Channel Type

N