BSS138NE6327T

Specifications

Typical Turnon Delay Time Ns

2.3

Category

Small Signal

Process Technology

SIPMOS

Minimum Operating Temperature C

-55

Channel Type

N

Typical Gate Charge10v Nc

1

Eu Rohs

Compliant

Typical Gate Charge Vgs Nc

1@10V

Parça Durumu

Obsolete

Maximum Drain Source Voltage V

60

Maximum Operating Temperature C

150

Maximum Gate Source Voltage V

±20

Channel Mode

Enhancement

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

3500@10V

Configuration

Single

Typical Turnoff Delay Time Ns

6.7

Typical Rise Time Ns

3

Typical Input Capacitance Vds Pf

32@25V

Number Of Elements Per Chip

1

Hts

8541.21.00.95

Typical Fall Time Ns

8.2

Maximum Continuous Drain Current A

0.23

Ambalaj

Tape and Reel

Maximum Power Dissipation Mw

360