BSS131H6327HTSA1

Specifications

Typical Gate Charge10v Nc

2.1

Channel Type

N

Maximum Drain Source Voltage V

240

Parça Durumu

Active

Typical Gate Charge Vgs Nc

2.1@10V

Eu Rohs

Compliant

Category

Small Signal

Typical Turnon Delay Time Ns

3.3

Minimum Operating Temperature C

-55

Process Technology

SIPMOS

Hts

8541.21.00.95

Typical Input Capacitance Vds Pf

58@25V

Number Of Elements Per Chip

1

Typical Rise Time Ns

3.1

Typical Turnoff Delay Time Ns

13.7

Configuration

Single

Maximum Power Dissipation Mw

360

Ambalaj

Tape and Reel

Maximum Continuous Drain Current A

0.11

Typical Fall Time Ns

64.5

Supplier Temperature Grade

Automotive

Maximum Operating Temperature C

150

Eccn Us

EAR99

Maximum Drain Source Resistance Mohm

14000@10V

Channel Mode

Enhancement

Maximum Gate Source Voltage V

±20