BSC884N03MSGATMA1

Specifications

Channel Mode

Enhancement

Category

Power MOSFET

Maximum Gate Source Voltage V

±20

Package Height

1

Maximum Drain Source Voltage V

30

Minimum Operating Temperature C

-55

Pcb Changed

8

Automotive

No

Maximum Power Dissipation Mw

2500

Eu Rohs

Compliant with Exemption

Mounting

Surface Mount

Ambalaj

Tape and Reel

Channel Type

N

Typical Gate Charge Vgs Nc

17@4.5V

Ppap

No

Typical Fall Time Ns

7.2

Configuration

Single Quad Drain Triple Source

Package Length

5.15

Maximum Drain Source Resistance Mohm

4.5@10V

Package Width

5.9

Typical Rise Time Ns

6.8

Pin Sayısı

8

Supplier Package

TDSON EP

Process Technology

OptiMOS

Number Of Elements Per Chip

1

Lead Shape

No Lead

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

2700@15V

Typical Turnoff Delay Time Ns

16

Maximum Operating Temperature C

150

Standard Package Name

SON

Typical Turnon Delay Time Ns

13

Maximum Continuous Drain Current A

17

Parça Durumu

Obsolete