BSC100N03LSGXT

Specifications

Category

Power MOSFET

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

30

Package Height

1

Maximum Gate Source Voltage V

±20

Eu Rohs

Compliant

Automotive

No

Maximum Power Dissipation Mw

2500

Pcb Changed

8

Ppap

No

Configuration

Single Quad Drain Triple Source

Typical Fall Time Ns

2.4

Typical Gate Charge10v Nc

13

Channel Type

N

Typical Gate Charge Vgs Nc

6.3@4.5V|13@10V

Ambalaj

Tape and Reel

Mounting

Surface Mount

Pin Sayısı

8

Package Length

5.15

Maximum Drain Source Resistance Mohm

10@10V

Package Width

5.9

Typical Rise Time Ns

2.6

Typical Turnoff Delay Time Ns

13

Maximum Operating Temperature C

150

Lead Shape

No Lead

Number Of Elements Per Chip

1

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

1100@15V

Supplier Package

TDSON EP

Process Technology

OptiMOS

Standard Package Name

SON

Maximum Continuous Drain Current A

13

Parça Durumu

Obsolete

Typical Turnon Delay Time Ns

3