BSC094N03SGXT

Specifications

Channel Mode

Enhancement

Category

Power MOSFET

Maximum Gate Source Voltage V

±20

Package Height

1

Maximum Drain Source Voltage V

30

Minimum Operating Temperature C

-55

Pcb Changed

8

Automotive

No

Maximum Power Dissipation Mw

2800

Eu Rohs

Compliant

Ambalaj

Tape and Reel

Mounting

Surface Mount

Channel Type

N

Typical Gate Charge Vgs Nc

10@5V

Ppap

No

Typical Fall Time Ns

3

Configuration

Single Quad Drain Triple Source

Package Width

5.9

Package Length

5.15

Maximum Drain Source Resistance Mohm

9.4@10V

Typical Rise Time Ns

3.8

Pin Sayısı

8

Supplier Package

TDSON EP

Process Technology

OptiMOS

Lead Shape

No Lead

Number Of Elements Per Chip

1

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

1350@15V

Typical Turnoff Delay Time Ns

18

Maximum Operating Temperature C

150

Standard Package Name

SON

Typical Turnon Delay Time Ns

4.5

Maximum Continuous Drain Current A

14.6

Parça Durumu

Obsolete