BSC059N03SGXT

Specifications

Pcb Changed

8

Terminal Pozisyonu

DUAL

Terminal Kaplaması

MATTE TIN

Ppap

No

Configuration

Single Quad Drain Triple Source

Typical Fall Time Ns

3.8

Moisture Sensitivity Levels

1

Channel Type

N

Reflow Temperaturemax S

40

Avalanche Energy Rating Eas

150 mJ

Category

Power MOSFET

Number Of Terminals

8

Terminal Formu

FLAT

Channel Mode

Enhancement

Transistor Element Material

SILICON

Maximum Drain Source Voltage V

30

Minimum Operating Temperature C

-55

Package Style

SMALL OUTLINE

Maximum Gate Source Voltage V

±20

Package Height

1

Drain Currentmax Id

17.5 A

JESD-609 Kodu

e3

Additional Feature

LOGIC LEVEL COMPATIBLE

Parça Durumu

Obsolete

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case Connection

DRAIN

Package Description

SMALL OUTLINE, R-PDSO-F8

ECCN Kodu

EAR99

Package Width

5.9

Polaritychannel Type

N-CHANNEL

Package Length

5.15

Typical Rise Time Ns

4.8

Risk Rank

5.83

Kurşunsuz Kodu

Yes

Maximum Operating Temperature C

150

Typical Turnoff Delay Time Ns

22

Pulsed Drain Currentmax Idm

200 A

Number Of Elements Per Chip

1

Lead Shape

No Lead

Eccn Us

EAR99