BSC059N03SGT

Specifications

Typical Rise Time Ns

4.8

Maximum Drain Source Resistance Mohm

5.5@10V

Channel Mode

Enhancement

Hts

8541.29.00.95

Category

Power MOSFET

Typical Input Capacitance Vds Pf

2010@15V

Eccn Us

EAR99

Number Of Elements Per Chip

1

Process Technology

OptiMOS

Maximum Gate Source Voltage V

±20

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

22

Maximum Operating Temperature C

150

Maximum Drain Source Voltage V

30

Eu Rohs

Compliant

Maximum Power Dissipation Mw

2800

Typical Gate Charge Vgs Nc

15@5V

Channel Type

N

Typical Turnon Delay Time Ns

5.7

Configuration

Single Quad Drain Triple Source

Typical Fall Time Ns

3.8

Parça Durumu

Obsolete

Maximum Continuous Drain Current A

17.5