BSC032N03SGT

Specifications

Channel Mode

Enhancement

Hts

8541.21.00.95

Category

Power MOSFET

Package Height

1

Maximum Gate Source Voltage V

±20

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

30

Pcb Changed

8

Eu Rohs

Compliant

Maximum Power Dissipation Mw

2800

Automotive

No

Typical Gate Charge Vgs Nc

29@5V

Channel Type

N

Mounting

Surface Mount

Typical Fall Time Ns

5.4

Configuration

Single Quad Drain Triple Source

Ppap

No

Typical Rise Time Ns

7

Package Width

5.9

Package Length

5.15

Maximum Drain Source Resistance Mohm

3.2@10V

Pin Sayısı

8

Typical Input Capacitance Vds Pf

3820@15V

Eccn Us

EAR99

Number Of Elements Per Chip

1

Lead Shape

No Lead

Process Technology

OptiMOS

Supplier Package

TDSON EP

Typical Turnoff Delay Time Ns

32

Maximum Operating Temperature C

150

Standard Package Name

SON

Typical Turnon Delay Time Ns

7.5

Parça Durumu

Obsolete

Maximum Continuous Drain Current A

23