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C3 ChipZentronix

Infineon

BFR193E6327T

RF BJT Transistors

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Specifications

Maximum Collector Cutoff Current Na
100
Parça Durumu
Unconfirmed
Maximum Collectoremitter Voltage V
12
Eccn Us
EAR99
Typical Output Capacitance Pf
0.66
Supplier Temperature Grade
Automotive
Maximum Noise Figure Db
1.6(Typ)
Material
Si
Maximum Dc Collector Current Range A
0.06 to 0.12
Maximum Collectoremitter Voltage Range V
&l;20
Maximum Collector Base Voltage V
20
Typical Power Gain Db
15
Eu Rohs
Compliant
Maximum Power Dissipation Mw
580
Configuration
Single
Typical Input Capacitance Pf
2.25
Operational Bias Conditions
8V/30mA
Maximum Emitter Base Voltage V
2
Maximum Transition Frequency Mhz
8000(Typ)
Number Of Elements Per Chip
1
Maximum Emitter Cutoff Current Na
1000
Minimum Dc Current Gain Range
50 to 120
Tip
NPN
Ambalaj
Tape and Reel
Minimum Operating Temperature C
-55
Maximum Operating Temperature C
150
Minimum Dc Current Gain
70@30mA@8V
Maximum Dc Collector Current A
0.08

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