AUXIRSAMPLES (AUIRFN8401TR)

Specifications

Maximum Drain Source Resistance Mohm

4.6@10V

Maximum Power Dissipation Mw

4200

Channel Type

N

Eu Rohs

Compliant with Exemption

Ppap

Unknown

Maximum Gate Source Voltage V

±20

Parça Durumu

Obsolete

Channel Mode

Enhancement

Typical Turnoff Delay Time Ns

22

Package Height

1.1

Process Technology

HEXFET

Typical Input Capacitance Vds Pf

2170@25V

Configuration

Single Quad Drain Triple Source

Category

Power MOSFET

Package Width

5.76

Typical Gate Charge Vgs Nc

44@10V

Maximum Continuous Drain Current A

84

Maximum Operating Temperature C

175

Pin Sayısı

8

Maximum Idss Ua

1

Mounting

Surface Mount

Pcb Changed

8

Minimum Operating Temperature C

-55

Material

Si

Maximum Drain Source Voltage V

40

Typical Turnon Delay Time Ns

6.1

Package Length

4.98

Eccn Us

EAR99

Typical Rise Time Ns

13

Typical Gate Charge10v Nc

44

Automotive

Yes

Maximum Gate Source Leakage Current Na

100

Maximum Gate Threshold Voltage V

3.9

Supplier Temperature Grade

Automotive

Number Of Elements Per Chip

1

Typical Fall Time Ns

12

Supplier Package

PQFN

Ambalaj

Tape and Reel