AUIRLR3105TRL

Specifications

Maximum Gate Source Leakage Current Na

200

Package Height

2.39(Max)

Lead Shape

Gull-wing

Typical Gate To Drain Charge Nc

6

Maximum Power Dissipation Mw

57000

Configuration

Single

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

20(Max)@5V

Typical Turnoff Delay Time Ns

25

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

37@10V

Pin Sayısı

3

Maximum Gate Source Voltage V

±16

Maximum Drain Source Voltage V

55

Typical Rise Time Ns

57

Process Technology

HEXFET

Ppap

Unknown

Maximum Continuous Drain Current A

25

Parça Durumu

Obsolete

Channel Type

N

Automotive

Yes

Svhc

Yes

Number Of Elements Per Chip

1

Mounting

Surface Mount

Typical Fall Time Ns

37

Package Length

6.73(Max)

Maximum Idss Ua

20

Category

Power MOSFET

Svhc Exceeds Threshold

Yes

Eccn Us

EAR99

Pcb Changed

2

Eu Rohs

Compliant with Exemption

Typical Input Capacitance Vds Pf

710@25V

Tab

Tab

Maximum Gate Threshold Voltage V

3

Typical Turnon Delay Time Ns

8

Package Width

6.22(Max)

Standard Package Name

TO-252

Supplier Package

DPAK

Maximum Operating Temperature C

175