AUIRLR3105TR

Specifications

Typical Gate Charge Vgs Nc

20(Max)@5V

Configuration

Single

Maximum Gate Source Leakage Current Na

200

Process Technology

HEXFET

Üretici Parça No

AUIRLR3105TR

Typical Rise Time Ns

57

Pin Sayısı

3

Typical Turnoff Delay Time Ns

25

Power Dissipationmax Abs

57 W

Polaritychannel Type

N-CHANNEL

Channel Mode

Enhancement

Channel Type

N

Operating Temperaturemax

175 °C

Yüzey Montaj

YES

Rohs Code

Yes

Ambalaj

Tape and Reel

Part Life Cycle Code

Obsolete

Maximum Gate Threshold Voltage V

3

Supplier Package

DPAK

Drain Currentmax Abs Id

25 A

Eu Rohs

Compliant

Eccn Us

EAR99

Risk Rank

5.16

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Typical Input Capacitance Vds Pf

710@25V

REACH Uyumluluk Kodu

unknown

Maximum Idss Ua

20

Category

Power MOSFET

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

57000

Package Height

2.39(Max)

Lead Shape

Gull-wing

Maximum Drain Source Voltage V

55

Maximum Gate Source Voltage V

±16

Maximum Drain Source Resistance Mohm

37@10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements Per Chip

1

Typical Fall Time Ns

37

Package Length

6.73(Max)

Mounting

Surface Mount