AUIRF7799L2TR1

Specifications

Lead Shape

No Lead

Supplier Package

Direct-FET L8

Maximum Idss Ua

20

Drain Currentmax Abs Id

35 A

Channel Type

N

Polaritychannel Type

N-CHANNEL

Typical Gate Charge10v Nc

110

Maximum Gate Source Leakage Current Na

100

Yüzey Montaj

YES

Maximum Gate Threshold Voltage V

5

Rohs Code

Yes

Typical Gate Charge Vgs Nc

110@10V

Typical Fall Time Ns

26.6

Risk Rank

5.24

Maximum Gate Source Voltage V

±30

Typical Turnon Delay Time Ns

36.3

Ambalaj

Tape and Reel

Maximum Power Dissipation Mw

4300

Category

Power MOSFET

Üretici Parça No

AUIRF7799L2TR1

Automotive

Yes

Number Of Elements Per Chip

1

Pin Sayısı

15

Maximum Operating Temperature C

175

Package Height

0.49(Max)

Channel Mode

Enhancement

Power Dissipationmax Abs

125 W

REACH Uyumluluk Kodu

unknown

Package Length

7.1(Max)

Minimum Operating Temperature C

-55

Supplier Temperature Grade

Automotive

Typical Rise Time Ns

33.5

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Configuration

Single Hex Drain Octal Source

Process Technology

DirectFET

Maximum Drain Source Voltage V

250

Part Life Cycle Code

Obsolete

Package Width

9.15(Max)

Eccn Us

EAR99