2N7425JANSR

Specifications

Supplier Temperature Grade

Military

Maximum Idss Ua

25

Typical Gate Charge Vgs Nc

290(Max)@12V

Pcb Changed

3

Supplier Package

TO-254AA

Minimum Operating Temperature C

-55

Tab

Tab

Maximum Continuous Drain Current A

35

Maximum Gate Source Voltage V

±20

Ppap

No

Channel Mode

Enhancement

Maximum Drain Source Voltage V

100

Mounting

Through Hole

Process Technology

HEXFET

Maximum Drain Source Resistance Mohm

75@12V

Standard Package Name

TO-254-AA

Typical Input Capacitance Vds Pf

6000@25V

Maximum Gate Source Leakage Current Na

100

Typical Turnoff Delay Time Ns

190(Max)

Number Of Elements Per Chip

1

Eu Rohs

Not Compliant

Parça Durumu

Active

Hts

8541.29.00.95

Eccn Us

EAR99

Pin Sayısı

3

Package Length

13.84(Max)

Package Width

6.6(Max)

Channel Type

P

Typical Fall Time Ns

190(Max)

Lead Shape

Through Hole

Configuration

Single

Typical Turnon Delay Time Ns

35(Max)

Maximum Gate Threshold Voltage V

5

Package Height

13.84(Max)

Maximum Operating Temperature C

150

Typical Rise Time Ns

170(Max)

Automotive

No

Maximum Power Dissipation Mw

250000

Category

Power MOSFET