2N7002L6327XT

Specifications

Maximum Drain Source Resistance Mohm

3000@10V

Maximum Diode Forward Voltage V

1.2

Maximum Drain Source Voltage V

60

Channel Mode

Enhancement

Supplier Package

SOT-23

Maximum Junction Ambient Thermal Resistance On Pcb Cw

250

Pcb Changed

3

Operating Junction Temperature C

-55 to 150

Typical Gate Threshold Voltage V

2.1

Typical Rise Time Ns

3.3

Maximum Operating Temperature C

150

Category

Small Signal

Typical Turnon Delay Time Ns

3

Configuration

Single

Typical Reverse Transfer Capacitance Vds Pf

2@25V

Package Height

1(Max)

Pin Sayısı

3

Typical Diode Forward Voltage V

0.96

Package Width

1.3

Eccn Us

EAR99

Lead Shape

Gull-wing

Typical Fall Time Ns

3.1

Typical Reverse Recovery Time Ns

8.5

Typical Reverse Recovery Charge Nc

2.4

Minimum Gate Threshold Voltage V

1.5

Typical Gate To Drain Charge Nc

0.2

Typical Turnoff Delay Time Ns

5.5

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

13@25V

Standard Package Name

SOT

Process Technology

OptiMOS

Mounting

Surface Mount

Maximum Gate Source Leakage Current Na

10

Typical Gate Plateau Voltage V

4

Maximum Positive Gate Source Voltage V

20

Ppap

No

Maximum Gate Source Voltage V

±20

Maximum Continuous Drain Current A

0.3

Minimum Operating Temperature C

-55

Typical Gate Charge Vgs Nc

0.4@10V