2N6790JANTX

Specifications

Typical Fall Time Ns

50(Max)

Configuration

Single

Maximum Gate Source Voltage V

±20

Channel Type

N

Package Height

4.54(Max)

Maximum Operating Temperature C

150

Channel Mode

Enhancement

Çap

9.22(Max)

Process Technology

HEXFET

Typical Gate Charge10v Nc

14.3(Max)

Pcb Changed

3

Typical Gate Charge Vgs Nc

14.3(Max)@10V

Category

Power MOSFET

Hts

8541.29.00.95

Pin Sayısı

3

Parça Durumu

Active

Minimum Operating Temperature C

-55

Typical Turnoff Delay Time Ns

50(Max)

Eccn Us

EAR99

Ppap

No

Eu Rohs

Not Compliant

Maximum Drain Source Resistance Mohm

850@10V

Maximum Drain Source Voltage V

200

Typical Input Capacitance Vds Pf

260@25V

Automotive

No

Number Of Elements Per Chip

1

Typical Turnon Delay Time Ns

40(Max)

Maximum Power Dissipation Mw

20000

Maximum Continuous Drain Current A

3.5

Mounting

Through Hole

Typical Rise Time Ns

50(Max)

Standard Package Name

TO-205-AF

Supplier Temperature Grade

Military

Supplier Package

TO-39

Lead Shape

Through Hole