2N6770JANTX PX-SCN

Specifications

Minimum Gate Threshold Voltage V

2

Maximum Continuous Drain Current A

12

Typical Rise Time Ns

190(Max)

Typical Gate To Drain Charge Nc

70(Max)

Supplier Temperature Grade

Military

Maximum Drain Source Resistance Mohm

500@10V

Maximum Drain Source Voltage V

500

Svhc Exceeds Threshold

Yes

Maximum Pulsed Drain Current Tc25c A

48

Number Of Elements Per Chip

1

Typical Gate To Source Charge Nc

19(Max)

Maximum Power Dissipation Mw

150000

Typical Turnon Delay Time Ns

35(Max)

Maximum Positive Gate Source Voltage V

20

Eccn Us

EAR99

Maximum Idss Ua

25

Eu Rohs

Not Compliant

Category

Power MOSFET

Maximum Gate Source Leakage Current Na

100

Hts

8541.29.00.95

Maximum Gate Threshold Voltage V

4

Parça Durumu

Active

Typical Turnoff Delay Time Ns

170(Max)

Minimum Operating Temperature C

-55

Maximum Diode Forward Voltage V

1.7

Svhc

Yes

Typical Gate Charge10v Nc

120(Max)

Operating Junction Temperature C

-55 to 150

Typical Gate Charge Vgs Nc

120(Max)@10V

Maximum Operating Temperature C

150

Channel Mode

Enhancement

Typical Fall Time Ns

130(Max)

Configuration

Single

Maximum Gate Source Voltage V

±20

Channel Type

N