Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Reverse Breakdown Voltage
- 3V
- Tip
- Unamplified
- Algılama Mesafesi
- 0.125 (3.18mm)
- Output Configuration
- Phototransistor
- Montaj Tipi
- Through Hole
- Voltage Collector Emitter Breakdown Max
- 30V
- Sensing Method
- Through-Beam
- Power Dissipation
- 100mW
- Rise Time
- 15μs
- Çalışma Sıcaklığı
- -40°C~85°C
- Forward Voltage
- 1.6V
- Min. Çalışma Sıcaklığı
- -40°C
- Max Collector Current
- 30mA
- Parça Durumu
- Obsolete
- Housing Material
- Polysulfone
- Pin Sayısı
- 4
- Collector Emitter Voltage Vceo
- 30V
- Dark Current
- 100nA
- Number Of Elements
- 1
- Montaj
- Screw, Through Hole
- Yayın Yılı
- 1997
- RoHS Durumu
- RoHS Compliant
- Current Dc Forward If Max
- 50mA
- Collectoremitter Breakdown Voltage
- 30V
- Forward Current
- 50mA
- Collectoremitter Saturation Voltage
- 400mV
- Kılıf / Paket
- PCB Mount
- Currentcollector Ic Max
- 30mA
- Fabrika Tedarik Süresi
- 10 Weeks
- Response Time
- 15μs
- Maks. Çalışma Sıcaklığı
- 85°C
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fall Time Typ
- 15 μs
Related Products
AMI Semiconductor
H22B2
Transistor Optical Sensors
American Bright Optoelectronics Corporation
BPI-3C1-07
Transistor Optical Sensors
American Bright Optoelectronics Corporation
BPI-3C1-10
Transistor Optical Sensors
American Bright Optoelectronics Corporation
BPI-3C1-27
Transistor Optical Sensors
BI Technologies
OPB380L51
Transistor Optical Sensors
Banner Engineering
SL10VB6V W/30
Transistor Optical Sensors
Banner Engineering
SL30VB6V W/30
Transistor Optical Sensors
Banner Engineering
SL30VB6VY W/30
Transistor Optical Sensors