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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tip
- Unamplified
- Yayın Yılı
- 1997
- Çıkış Tipi
- Phototransistor
- Forward Current
- 50mA
- Power Dissipation
- 100mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Algılama Mesafesi
- 0.125 (3.18mm)
- Ambalaj
- Bulk
- Fall Time Typ
- 15 μs
- Forward Voltage
- 1.6V
- Output Configuration
- Transistor
- Response Time
- 15μs
- Maks. Çalışma Sıcaklığı
- 85°C
- Parça Durumu
- Obsolete
- Collectoremitter Saturation Voltage
- 600mV
- Çalışma Sıcaklığı
- -40°C~85°C
- Kılıf / Paket
- Module, Pre-Wired
- Current Dc Forward If Max
- 50mA
- Housing Material
- Polysulfone
- Reverse Breakdown Voltage
- 3V
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 30V
- RoHS Durumu
- RoHS Compliant
- Sensing Method
- Through-Beam
- Fabrika Tedarik Süresi
- 14 Weeks
- Montaj Tipi
- Chassis Mount, Wire Lead
- Montaj
- Chassis Mount, Screw, Wire
- Currentcollector Ic Max
- 30mA
- Max Power Dissipation
- 100mW
- Pin Sayısı
- 4
- Dark Current
- 100nA
- Collectoremitter Breakdown Voltage
- 30V
- Min. Çalışma Sıcaklığı
- -40°C
- Voltage Collector Emitter Breakdown Max
- 30V
- Max Collector Current
- 30mA
- Rise Time
- 15μs
- Number Of Channels
- 1
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