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Support
Technical team support
Specifications
- Seri
- HEXFET®, StrongIRFET™
- Vgsth Max Id
- 3.7V @ 150µA
- Drain To Source Voltage Vdss
- 60 V
- Power Dissipation Max
- 230W (Tc)
- Gate Charge Qg Max Vgs
- 210 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 7020 pF @ 25 V
- Kılıf / Paket
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Ürün Durumu
- Active
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Drive Voltage Max Rds On Min Rds On
- 6V, 10V
- Fet Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Montaj Tipi
- Through Hole
- Tedarikçi Cihaz Paketi
- TO-262
- Vgs Max
- ±20V
- Paket
- Bulk
- Current Continuous Drain Id25
- 173A (Tc)
- Rds On Max Id Vgs
- 3.3mOhm @ 100A, 10V
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