RFK35N10

Specifications

Operating Temperaturemax

150 °C

Rohs Code

No

Drain Currentmax Id

35 A

Package Style

FLANGE MOUNT

Jesd30 Code

O-MBFM-P2

Power Dissipationmax Abs

150 W

JESD-609 Kodu

e0

Polaritychannel Type

N-CHANNEL

Terminal Kaplaması

TIN LEAD

Pulsed Drain Currentmax Idm

100 A

Part Life Cycle Code

Obsolete

Ihs Manufacturer

HARRIS SEMICONDUCTOR

Package Shape

ROUND

REACH Uyumluluk Kodu

unknown

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Turnoff Timemax Toff

800 ns

Drainsource On Resistancemax

0.055 Ω

Operating Mode

ENHANCEMENT MODE

Feedback Capmax Crss

600 pF

Transistor Element Material

SILICON

Terminal Pozisyonu

BOTTOM

Yüzey Montaj

NO

Number Of Elements

1

Package Body Material

METAL

Transistor Application

SWITCHING

Turnon Timemax Ton

550 ns

Terminal Formu

PIN/PEG

Qualification Status

Not Qualified

Jedec95 Code

TO-204AE

Package Description

FLANGE MOUNT, O-MBFM-P2

Ds Breakdown Voltagemin

100 V

ECCN Kodu

EAR99

HTS Kodu

8541.29.00.95

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

2

Power Dissipation Ambientmax

150 W