JANTX2N6796

Specifications

Drain To Source Resistance

180 mΩ

Çap

9.22(Max)

Operating Temperaturemax

150 °C

Operating Mode

ENHANCEMENT MODE

Ambalaj

Bulk

Lead Shape

Through Hole

Radyasyon Dayanımı

No

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Input Capacitance Vds Pf

650@25V

Ppap

No

Yüzey Montaj

NO

Drain Currentmax Id

8 A

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

unknown

Reference Standard

MILITARY STANDARD (USA)

RoHS

Compliant

Package Body Material

METAL

Gate To Source Voltage Vgs

20 V

Hts

8541.29.00.95

Ds Breakdown Voltagemin

100 V

HTS Kodu

8541.29.00.95

Number Of Elements

1

Jedec95 Code

TO-205AF

Pin Sayısı

3

Mounting

Through Hole

Case Connection

DRAIN

Package Style

CYLINDRICAL

Power Dissipation

25 W

Typical Rise Time Ns

75(Max)

Ihs Manufacturer

HARRIS SEMICONDUCTOR

Channel Type

N

Eu Rohs

Not Compliant

Typical Gate Charge10v Nc

28.5(Max)

Feedback Capmax Crss

150 pF

Jesd30 Code

O-MBCY-W3

Pulsed Drain Currentmax Idm

32 A

Polaritychannel Type

N-CHANNEL

Qualification Status

Not Qualified

Typical Gate Charge Vgs Nc

28.5(Max)@10V