IRFD120

Specifications

Case Inch

0603

Terminal Pozisyonu

DUAL

Power Dissipationmax Abs

1 W

Operating Temperaturemax

150 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Case Mm

1608

Transport Packaging Sizequantity

48*32*22.5/1500

Depth

26 mm

Rohs Code

No

Dielektrik

C0G (NP0)

Package Shape

RECTANGULAR

Avalanche Energy Rating Eas

100 mJ

Kapasitans

0.47pF

REACH Uyumluluk Kodu

unknown

Part Life Cycle Code

Transferred

Configuration

SINGLE WITH BUILT-IN DIODE

Mounting Method

soldering

Tip

3-pole microphone socket on panel

Capacitance Tolerance

±0.25pF

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

HARRIS SEMICONDUCTOR

Exterior Housing Material

1

Jesd30 Code

R-PDIP-T3

Mounting

SMD

Drain Currentmax Id

1.3 A

Mounting Hole Size

19.5

Ds Breakdown Voltagemin

100 V

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Number Of Terminals

3

Case Connection

DRAIN

Additional Feature

AVALANCHE RATED

Gross Weight

9.57

Pulsed Drain Currentmax Idm

10 A

Çalışma Sıcaklığı

-55...125°C

Drainsource On Resistancemax

0.3 Ω

Yükseklik

32

Package Description

HVMDIP-4

Kind Of Capacitor

MLCC