GE1301

Specifications

Capacitance Vr F

100pF @ 4V, 1MHz

Diode Type

Standard

Terminal Kaplaması

TIN LEAD

Voltage Dc Reverse Vr Max

50 V

Risk Rank

5.8

Package Body Material

GLASS

Kılıf / Paket

DO-204, Axial

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Kurşunsuz Kodu

No

Number Of Elements

1

Voltage Forward Vf Max If

975 mV @ 2 A

Number Of Phases

1

Ürün Durumu

Active

Case Connection

ISOLATED

Terminal Formu

WIRE

Üretici Parça No

GE1301

Diode Element Material

SILICON

Ihs Manufacturer

ROCHESTER ELECTRONICS INC

Reverse Recovery Time Trr

35 ns

Package Description

O-LALF-W2

Configuration

SINGLE

Reverse Recovery Timemax

0.035 µs

Yüzey Montaj

NO

Current Average Rectified Io

6A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e0

Tedarikçi Cihaz Paketi

AL-4

Operating Temperature Junction

-65°C ~ 175°C

Paket

Bulk

Reflow Temperaturemax S

NOT SPECIFIED

Qualification Status

COMMERCIAL

RoHS

Non-Compliant

Rohs Code

No

Part Life Cycle Code

Active

Current Reverse Leakage Vr

5 μA @ 50 V

Package Style

LONG FORM

Nonrep Pk Forward Currentmax

150 A

Applications

ULTRA FAST RECOVERY

Jesd30 Code

O-LALF-W2

Rep Pk Reverse Voltagemax

50 V