GE1003

Specifications

Diode Type

Standard

Current Average Rectified Io

1A

Reverse Recovery Timemax

0.035 µs

Capacitance Vr F

45pF @ 4V, 1MHz

Yüzey Montaj

NO

Tedarikçi Cihaz Paketi

TO-204AE

JESD-609 Kodu

e0

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Paket

Bulk

Operating Temperature Junction

-65°C ~ 175°C

Reflow Temperaturemax S

NOT SPECIFIED

Qualification Status

COMMERCIAL

Risk Rank

5.83

Package Body Material

GLASS

Terminal Kaplaması

TIN LEAD

Voltage Dc Reverse Vr Max

150 V

Current Reverse Leakage Vr

2 μA @ 150 V

Kılıf / Paket

TO-204AE

RoHS

Non-Compliant

Part Life Cycle Code

Active

Rohs Code

No

Voltage Forward Vf Max If

950 mV @ 1 A

Rep Pk Reverse Voltagemax

150 V

Package Style

LONG FORM

Kurşunsuz Kodu

No

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Jesd30 Code

O-LALF-W2

Number Of Elements

1

Case Connection

ISOLATED

Terminal Formu

WIRE

REACH Uyumluluk Kodu

unknown

Ürün Durumu

Active

Output Currentmax

1 A

Moisture Sensitivity Levels

NOT SPECIFIED

Terminal Pozisyonu

AXIAL

Diode Element Material

SILICON

Üretici Parça No

GE1003

Number Of Terminals

2

Reverse Recovery Time Trr

35 ns

Ihs Manufacturer

ROCHESTER ELECTRONICS INC