GE1002

Specifications

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Kurşunsuz Kodu

No

Package Style

LONG FORM

Number Of Elements

1

Jesd30 Code

O-LALF-W2

Voltage Forward Vf Max If

950 mV @ 1 A

Rep Pk Reverse Voltagemax

100 V

Output Currentmax

1 A

Ürün Durumu

Active

Moisture Sensitivity Levels

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Terminal Pozisyonu

AXIAL

Case Connection

ISOLATED

Terminal Formu

WIRE

Üretici Parça No

GE1002

Number Of Terminals

2

Diode Element Material

SILICON

Package Shape

ROUND

Ihs Manufacturer

ROCHESTER ELECTRONICS INC

Reverse Recovery Time Trr

35 ns

Configuration

SINGLE

Package Description

O-LALF-W2

Montaj Tipi

Through Hole

Reverse Recovery Timemax

0.035 µs

Capacitance Vr F

45pF @ 4V, 1MHz

Yüzey Montaj

NO

Diode Type

Standard

Current Average Rectified Io

1A

JESD-609 Kodu

e0

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tedarikçi Cihaz Paketi

TO-204AE

Terminal Kaplaması

TIN LEAD

Voltage Dc Reverse Vr Max

100 V

Operating Temperature Junction

-65°C ~ 175°C

Paket

Bulk

Reflow Temperaturemax S

NOT SPECIFIED

Qualification Status

COMMERCIAL

Risk Rank

5.82

Package Body Material

GLASS

RoHS

Non-Compliant