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C3 ChipZentronix

HARRIS

HGTG30N60B3

Single IGBTs

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$3.25
  • 10+ pcs$3.06
  • 100+ pcs$2.89
  • 500+ pcs$2.73

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Max Breakdown Voltage
600V
Turn Off Timenom Toff
365 ns
Current Collector Pulsed Icm
220 A
Paket
Tube
Gateemitter Voltagemax
20V
Yayın Yılı
2013
Transistor Application
POWER CONTROL
Temel Parça No
HGTG30N60
Element Configuration
Single
Switching Energy
500µJ (on), 680µJ (off)
Contact Plating
Tin
Fabrika Tedarik Süresi
4 Weeks
Voltage Collector Emitter Breakdown Max
600 V
Max Collector Current
60A
Voltage Rated Dc
600V
Akım Değeri
60A
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Voltage Vceo
600V
Reach Svhc
No SVHC
Kurşunsuz
Lead Free
HTS Kodu
8541.29.00.95
Genişlik
4.82mm
Ambalaj
Tube
Fall Timemax Tf
150ns
Collectoremitter Saturation Voltage
1.45V
JESD-609 Kodu
e3
Number Of Elements
1
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-55°C ~ 150°C (TJ)
Kurşunsuz Kodu
yes
Additional Feature
LOW CONDUCTION LOSS
Test Conditions
480V, 30A, 3Ohm, 15V
Max Power Dissipation
208W
Case Connection
COLLECTOR
Power Max
208 W
Kılıf / Paket
TO-247-3
Transistor Element Material
SILICON
Gate Charge
170 nC
Td Onoff25c
36ns/137ns
Pin Sayısı
3

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