Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Data Rate Architecture
- SDR
- Access Time
- 5.5 ns
- Maks. Çalışma Sıcaklığı
- + 85 C
- Usage Level
- Industrial grade
- Supply Currentmax
- 165 mA, 200 mA
- Maximum Operating Supply Voltage
- 2.7, 3.6 V
- Maximum Clock Rate
- 181.8@Flow-Through/250@Pipelined MHz
- Number Of Words
- 512 kWords
- Number Of Io Lines
- 18 Bit
- Moisture Sensitive
- Yes
- Supplier Package
- TQFP
- Density
- 9 Mbit
- Number Of Ports
- 2
- Ambalaj
- Tray
- Çalışma Sıcaklığı
- -40 to 85 °C
- Interface Type
- Parallel
- Pin Sayısı
- 100
- Memory Size
- 9 Mbit
- Organization
- 512 k x 18
- Architecture
- Flow-Through/Pipelined
- Typical Operating Supply Voltage
- 2.5, 3.3 V
- RoHS
- Details
- Mounting
- Surface Mount
- Supply Voltagemax
- 3.6 V
- Tip
- Pipeline/Flow Through
- Fabrika Paket Adedi
- 72
- Kılıf / Paket
- TQFP-100
- Tradename
- SyncBurst
- Supply Voltagemin
- 2.3 V
- Screening Level
- Industrial
- Memory Types
- SDR
- Minimum Operating Temperature
- - 40 C
- Address Bus Width
- 19 Bit
- Minimum Operating Supply Voltage
- 2.3, 3 V
- Seri
- GS88018CGT
- Montaj Stili
- SMD/SMT
- Timing Type
- Synchronous
- Maximum Clock Frequency
- 250 MHz
- Ürün Tipi
- SRAM
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory