Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Supplies
- 2.5/3.3 V
- Tip
- SCD/DCD Pipeline/Flow Through
- Supply Voltagemax
- 3.6 V
- Standby Currentmax
- 0.06 A
- Operating Mode
- SYNCHRONOUS
- Operating Temperaturemax
- 70 °C
- Package Style
- GRID ARRAY, LOW PROFILE
- Screening Level
- Commercial
- Additional Feature
- FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
- Io Type
- COMMON
- Minimum Operating Temperature
- 0 C
- Access Timemax
- 7.5 ns
- Terminal Formu
- BALL
- Ürün Tipi
- SRAM
- Kurşunsuz Kodu
- Yes
- Maximum Clock Frequency
- 200 MHz
- Timing Type
- Synchronous
- Tepe Reflow Sıcaklığı (°C)
- 260
- JESD-609 Kodu
- e1
- Package Code
- LBGA
- Risk Rank
- 1.45
- Package Equivalence Code
- BGA209,11X19,40
- Fabrika Tedarik Süresi
- 8 Weeks
- Parallelserial
- PARALLEL
- Package Description
- LBGA, BGA209,11X19,40
- Clock Frequencymax Fclk
- 200 MHz
- Çalışma Sıcaklığı
- 0 to 70 °C
- Ambalaj
- Tray
- Package Shape
- RECTANGULAR
- Üretici Parça No
- GS832272GC-200
- Fonksiyon Sayısı
- 1
- Memory Size
- 36 Mbit
- Pin Sayısı
- 209
- RoHS
- Details
- Terminal Pozisyonu
- BOTTOM
- Typical Operating Supply Voltage
- 2.5, 3.3 V
- Organization
- 512 k x 72
- Output Characteristics
- 3-STATE
- Ihs Manufacturer
- GSI TECHNOLOGY
- Tradename
- SyncBurst
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory