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GSI Technology

GS8161E36DGD-250IV

Memory

RoHS: Compliant

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Compliant

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Specifications

Number Of Io Lines
36 Bit
Architecture
Flow-Through/Pipelined
Usage Level
Industrial grade
Access Time
5.5 ns
RoHS
Details
Data Rate Architecture
SDR
Supply Voltagemin
1.7 V
Mounting
Surface Mount
Interface Type
Parallel
Memory Size
18 Mbit
Supply Voltagemax
2.7 V
Fabrika Paket Adedi
18
Maks. Çalışma Sıcaklığı
+ 85 C
Moisture Sensitive
Yes
Ambalaj
Tray
Number Of Ports
4
Maximum Clock Rate
181.8@Flow-Through/250@Pipelined MHz
Timing Type
Synchronous
Maximum Clock Frequency
250 MHz
Ürün Tipi
SRAM
Maximum Operating Supply Voltage
2, 2.7 V
Minimum Operating Temperature
- 40 C
Supplier Package
FBGA
Screening Level
Industrial
Organization
512 k x 36
Address Bus Width
19 Bit
Memory Types
SDR
Tip
DCD Pipeline/Flow Through
Number Of Words
512 kWords
Pin Sayısı
165
Kılıf / Paket
BGA-165
Supply Currentmax
245 mA, 265 mA
Montaj Stili
SMD/SMT
Minimum Operating Supply Voltage
1.7, 2.3 V
Density
18 Mbit
Seri
GS8161E36DGD
Tradename
SyncBurst
Typical Operating Supply Voltage
1.8, 2.5 V
Çalışma Sıcaklığı
-40 to 85 °C

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