GS8160E36DGT-200IV

Specifications

Organization

512 k x 36

Screening Level

Industrial

Memory Types

SDR

Address Bus Width

19 Bit

Tip

DCD Synchronous Burst

Number Of Words

512 kWords

Kılıf / Paket

TQFP-100

Pin Sayısı

100

Minimum Operating Supply Voltage

2.3, 3 V

Montaj Stili

SMD/SMT

Supply Currentmax

225 mA, 230 mA

Density

18 Mbit

Seri

GS8160E36DGT

Tradename

SyncBurst

Typical Operating Supply Voltage

2.5, 3.3 V

Çalışma Sıcaklığı

-40 to 85 °C

Number Of Io Lines

36 Bit

Architecture

Flow-Through/Pipelined

Usage Level

Industrial grade

RoHS

Details

Access Time

6.5 ns

Interface Type

Parallel

Mounting

Surface Mount

Supply Voltagemin

1.7 V

Data Rate Architecture

SDR

Memory Size

18 Mbit

Maks. Çalışma Sıcaklığı

+ 100 C

Fabrika Paket Adedi

18

Supply Voltagemax

2.7 V

Moisture Sensitive

Yes

Ambalaj

Tray

Number Of Ports

4

Maximum Clock Rate

200 MHz

Ürün Tipi

SRAM

Maximum Clock Frequency

200 MHz

Timing Type

Synchronous

Minimum Operating Temperature

- 40 C

Maximum Operating Supply Voltage

2.7, 3.6 V

Supplier Package

TQFP