Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Memory Types
- SDR
- Organization
- 1 M x 18
- Tip
- DCD Synchronous Burst
- Minimum Operating Supply Voltage
- 1.7, 2.3 V
- Montaj Stili
- SMD/SMT
- Supply Currentmax
- 225 mA, 245 mA
- Kılıf / Paket
- TQFP-100
- Pin Sayısı
- 100
- Seri
- GS8160E18DGT
- Tradename
- SyncBurst
- Çalışma Sıcaklığı
- -40 to 85 °C
- Typical Operating Supply Voltage
- 1.8, 2.5 V
- RoHS
- Details
- Access Time
- 5.5
- Number Of Io Lines
- 18 Bit
- Memory Size
- 18 Mbit
- Interface Type
- Parallel
- Supply Voltagemin
- 1.7 V
- Maks. Çalışma Sıcaklığı
- + 100 C
- Fabrika Paket Adedi
- 18
- Supply Voltagemax
- 2.7 V
- Moisture Sensitive
- Yes
- Ambalaj
- Tray
- Memory Density
- 18
- Maximum Clock Rate
- 250 MHz
- Ürün Tipi
- SRAM
- Maximum Clock Frequency
- 250 MHz
- Timing Type
- Synchronous
- Supplier Package
- TQFP
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Supply Voltage
- 2, 2.7 V
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory