GT110N06S

Specifications

Drain To Source Voltage Vdss

60 V

Tedarikçi Cihaz Paketi

8-SOP

Vgsth Max Id

2.4V @ 250µA

Input Capacitance Ciss Max Vds

1300 pF @ 25 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Ürün Durumu

Active

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Gate Charge Qg Max Vgs

24 nC @ 10 V

Current Continuous Drain Id25

14A (Tc)

Rds On Max Id Vgs

11mOhm @ 14A, 10V

Fet Type

N-Channel

Vgs Max

±20V

Montaj Tipi

Surface Mount

Power Dissipation Max

3W (Tc)

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;