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C3 ChipZentronix
MURT20060

GeneSiC Semiconductor

MURT20060

Rectifier Diode Array

RoHS: Compliant

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Specifications

Yayın Yılı
2013
Max Reverse Voltage Dc
600V
Operating Temperature Max
150°C
Current Reverse Leakage Vr
25μA @ 50V
Jesd30 Code
R-PUFM-X3
Fabrika Tedarik Süresi
6 Weeks
Operating Temperature Min
-55°C
Case Connection
ISOLATED
Kurşunsuz Kodu
yes
Terminal Sayısı
3
Terminal Pozisyonu
UPPER
Reverse Voltage
600V
Current Average Rectified Io
200A DC
Applications
SUPER FAST RECOVERY
Peak Reverse Current
25μA
Diode Element Material
SILICON
RoHS Durumu
RoHS Compliant
Number Of Phases
1
Terminal Formu
UNSPECIFIED
Number Of Elements
2
Reverse Recovery Time
160 ns
Ambalaj
Bulk
Parça Durumu
Active
Kılıf / Paket
Three Tower
Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Forward Vf Max If
1.7V @ 100A
Max Surge Current
2kA
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Nonrep Pk Forward Currentmax
2000A
Diode Configuration
1 Pair Common Cathode
Average Rectified Current
200A
Montaj
Chassis Mount
Montaj Tipi
Chassis Mount
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Output Currentmax
100A

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