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MBRT20030R

GeneSiC Semiconductor

MBRT20030R

Rectifier Diode Array

RoHS: Compliant

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Specifications

Parça Durumu
Active
ECCN Kodu
EAR99
Case Connection
ISOLATED
Ambalaj
Bulk
Number Of Phases
1
Current Reverse Leakage Vr
1mA @ 20V
Terminal Sayısı
3
Max Repetitive Reverse Voltage Vrrm
30V
Fabrika Tedarik Süresi
6 Weeks
Current Average Rectified Io
200A DC
Number Of Elements
2
Maks. Çalışma Sıcaklığı
150°C
Min. Çalışma Sıcaklığı
-40°C
Forward Current
200A
Max Surge Current
1.5kA
Peak Reverse Current
1A
Diode Element Material
SILICON
Kurşunsuz Kodu
yes
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Max Reverse Voltage Dc
30V
Applications
POWER
Output Currentmax
100A
Yayın Yılı
2010
Diode Configuration
1 Pair Common Anode
Max Reverse Leakage Current
1μA
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Terminal Formu
UNSPECIFIED
Montaj
Chassis Mount
Terminal Pozisyonu
UPPER
Voltage Forward Vf Max If
750mV @ 100A
Average Rectified Current
200A
HTS Kodu
8541.10.00.80
Montaj Tipi
Chassis Mount
RoHS Durumu
RoHS Compliant
Kılıf / Paket
Three Tower
Nem Hassasiyeti (MSL)
1 (Unlimited)
Jesd30 Code
R-PUFM-X3

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