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MBR60040CTR

GeneSiC Semiconductor

MBR60040CTR

Rectifier Diode Array

RoHS: Compliant

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Compliant

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Specifications

Terminal Sayısı
2
Kurşunsuz Kodu
yes
Current Average Rectified Io
300A
Output Currentmax
300A
Element Configuration
Common Anode
Max Repetitive Reverse Voltage Vrrm
40V
Voltage Forward Vf Max If
750mV @ 300A
Ambalaj
Bulk
Current Reverse Leakage Vr
1mA @ 20V
Jesd30 Code
R-PUFM-X2
Number Of Phases
1
Average Rectified Current
600A
Diode Configuration
1 Pair Common Anode
Terminal Pozisyonu
UPPER
Yayın Yılı
2012
Operating Temperature Junction
-55°C~150°C
Diode Type
Schottky
Number Of Elements
2
Peak Reverse Current
1A
ECCN Kodu
EAR99
Applications
POWER
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Kılıf / Paket
Twin Tower
Fabrika Tedarik Süresi
6 Weeks
Forward Current
600A
Terminal Formu
UNSPECIFIED
HTS Kodu
8541.10.00.80
Montaj Tipi
Chassis Mount
Min. Çalışma Sıcaklığı
-40°C
Max Surge Current
4kA
RoHS Durumu
RoHS Compliant
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Max Reverse Leakage Current
1μA
Diode Element Material
SILICON
Montaj
Chassis Mount
Maks. Çalışma Sıcaklığı
150°C
Max Reverse Voltage Dc
40V

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