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MBR60035CTR

GeneSiC Semiconductor

MBR60035CTR

Rectifier Diode Array

RoHS: Compliant

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Compliant

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Specifications

Fabrika Tedarik Süresi
6 Weeks
Forward Current
600A
Kılıf / Paket
Twin Tower
Terminal Formu
UNSPECIFIED
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Min. Çalışma Sıcaklığı
-40°C
Max Surge Current
4kA
RoHS Durumu
RoHS Compliant
HTS Kodu
8541.10.00.80
Montaj Tipi
Chassis Mount
Maks. Çalışma Sıcaklığı
150°C
Montaj
Chassis Mount
Max Reverse Voltage Dc
35V
Max Reverse Leakage Current
1μA
Parça Durumu
Active
Diode Element Material
SILICON
Current Average Rectified Io
300A
Terminal Sayısı
2
Kurşunsuz Kodu
yes
Voltage Forward Vf Max If
750mV @ 300A
Max Repetitive Reverse Voltage Vrrm
35V
Ambalaj
Bulk
Output Currentmax
300A
Terminal Pozisyonu
UPPER
Diode Type
Schottky
Average Rectified Current
600A
Number Of Phases
1
Current Reverse Leakage Vr
1mA @ 20V
Jesd30 Code
R-PUFM-X2
Diode Configuration
1 Pair Common Anode
Applications
POWER
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Number Of Elements
2
Peak Reverse Current
1A
ECCN Kodu
EAR99

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