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MBR600100CTR

GeneSiC Semiconductor

MBR600100CTR

Rectifier Diode Array

RoHS: Compliant

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Specifications

Terminal Sayısı
2
Kurşunsuz Kodu
yes
Current Average Rectified Io
300A
Output Currentmax
300A
Ambalaj
Bulk
Max Repetitive Reverse Voltage Vrrm
100V
Voltage Forward Vf Max If
880mV @ 300A
Diode Configuration
1 Pair Common Anode
Current Reverse Leakage Vr
1mA @ 20V
Jesd30 Code
R-PUFM-X2
Number Of Phases
1
Average Rectified Current
600A
Diode Type
Schottky
Terminal Pozisyonu
UPPER
Yayın Yılı
2013
Number Of Elements
2
Peak Reverse Current
1A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Applications
POWER
Kılıf / Paket
Twin Tower
Fabrika Tedarik Süresi
6 Weeks
Forward Current
600A
Terminal Formu
UNSPECIFIED
Montaj Tipi
Chassis Mount
RoHS Durumu
RoHS Compliant
Max Surge Current
4kA
Min. Çalışma Sıcaklığı
-40°C
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Nem Hassasiyeti (MSL)
1 (Unlimited)
Diode Element Material
SILICON
Parça Durumu
Active
Max Reverse Leakage Current
1μA
Max Reverse Voltage Dc
100V
Montaj
Chassis Mount
Maks. Çalışma Sıcaklığı
150°C

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