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MBR30030CTR

GeneSiC Semiconductor

MBR30030CTR

Rectifier Diode Array

RoHS: Compliant

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Compliant

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Specifications

Min. Çalışma Sıcaklığı
-40°C
Jesd30 Code
R-PUFM-X2
Diode Element Material
SILICON
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Fabrika Tedarik Süresi
4 Weeks
Yayın Yılı
2012
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Terminal Sayısı
2
Montaj Tipi
Chassis Mount
Terminal Formu
UNSPECIFIED
HTS Kodu
8541.10.00.80
Diode Configuration
1 Pair Common Anode
ECCN Kodu
EAR99
Max Reverse Leakage Current
1μA
Output Currentmax
150A
Average Rectified Current
300A
Number Of Elements
2
Kılıf / Paket
Twin Tower
Maks. Çalışma Sıcaklığı
175°C
Max Reverse Voltage Dc
30V
Ambalaj
Bulk
Number Of Phases
1
Max Repetitive Reverse Voltage Vrrm
30V
Current Reverse Leakage Vr
8mA @ 20V
Max Surge Current
2.5kA
RoHS Durumu
RoHS Compliant
Montaj
Chassis Mount
Diode Type
Schottky
Current Average Rectified Io
300A DC
Peak Reverse Current
1A
Forward Current
300A
Terminal Pozisyonu
UPPER
Voltage Forward Vf Max If
650mV @ 150A
Applications
POWER

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