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C3 ChipZentronix
MBR20080CT

GeneSiC Semiconductor

MBR20080CT

Rectifier Diode Array

RoHS: Compliant

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Specifications

Max Reverse Leakage Current
1μA
Average Rectified Current
200A
Output Currentmax
100A
Diode Configuration
1 Pair Common Cathode
HTS Kodu
8541.10.00.80
Terminal Formu
UNSPECIFIED
ECCN Kodu
EAR99
Terminal Sayısı
2
Parça Durumu
Active
Montaj Tipi
Chassis Mount
Max Reverse Voltage Dc
80V
Maks. Çalışma Sıcaklığı
175°C
Kılıf / Paket
Twin Tower
Number Of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Fabrika Tedarik Süresi
6 Weeks
Jesd30 Code
R-PUFM-X2
Diode Element Material
SILICON
Min. Çalışma Sıcaklığı
-40°C
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2013
Current Average Rectified Io
200A DC
Montaj
Chassis Mount
Diode Type
Schottky
Applications
POWER
Voltage Forward Vf Max If
840mV @ 100A
Terminal Pozisyonu
UPPER
Forward Current
200A
Peak Reverse Current
1A
Ambalaj
Bulk
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
RoHS Durumu
RoHS Compliant
Max Surge Current
1.5kA
Current Reverse Leakage Vr
5mA @ 20V
Max Repetitive Reverse Voltage Vrrm
80V
Kurşunsuz Kodu
yes
Number Of Phases
1

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