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MBR20040CTR

GeneSiC Semiconductor

MBR20040CTR

Rectifier Diode Array

RoHS: Compliant

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Specifications

Peak Reverse Current
1A
Forward Current
200A
Terminal Pozisyonu
UPPER
Voltage Forward Vf Max If
650mV @ 100A
Applications
POWER
Diode Type
Schottky
Montaj
Chassis Mount
Current Average Rectified Io
200A DC
Kurşunsuz Kodu
yes
Number Of Phases
1
Max Repetitive Reverse Voltage Vrrm
40V
Current Reverse Leakage Vr
5mA @ 20V
Max Surge Current
1.5kA
RoHS Durumu
RoHS Compliant
Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Ambalaj
Bulk
Element Configuration
Common Anode
Number Of Elements
2
Kılıf / Paket
Twin Tower
Maks. Çalışma Sıcaklığı
175°C
Max Reverse Voltage Dc
40V
Parça Durumu
Active
Terminal Sayısı
2
Montaj Tipi
Chassis Mount
Diode Configuration
1 Pair Common Anode
HTS Kodu
8541.10.00.80
Terminal Formu
UNSPECIFIED
ECCN Kodu
EAR99
Max Reverse Leakage Current
1μA
Output Currentmax
100A
Average Rectified Current
200A
Yayın Yılı
2010
Nem Hassasiyeti (MSL)
1 (Unlimited)
Min. Çalışma Sıcaklığı
-40°C
Jesd30 Code
R-PUFM-X2
Diode Element Material
SILICON
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Fabrika Tedarik Süresi
6 Weeks

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